Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-Gate-Sweep Measurements

Gate Stability of GaN-Based HEMTs with P-Type Gate

This paper reports on an extensive investigation of the gate stability of GaN-based High Electron Mobility Transistors with p-type gate submitted to forward gate stress. Based on combined electrical and electroluminescence measurements, we demonstrate the following results: (i) the catastrophic breakdown voltage of the gate diode is higher than 11 V at room temperature; (ii) in a step-stress ex...

AlN/GaN insulated gate HEMTs with HfO2 gate dielectric

AlN/GaN single heterojunction MOS-HEMTs grown by molecular beam epitaxy have been fabricated utilising HfO2 high-K dielectrics deposited by atomic layer deposition. Typical DC transfer characteristics of 1.3 mm gate length devices show a maximum drain current of 950 mA/mm and a transconductance of 210 mS/mm with gate currents of 5 mA/mm in pinch-off. Unity gain cutoff frequencies, ft and fmax, ...

Thermal Stability of AlGaN/GaN HEMTs Using High Work Function Pd-gate, Ir-gate, Ni-gate Designs

Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure

Article history: Received 30 June 2015 Received in revised form 20 November 2015 Accepted 30 November 2015 Available online 7 December 2015 This paper reports an analysis of the degradation mechanisms of GaN-based normally-off transistors submitted to off-state stress, forward-gate operation and electrostatic discharges. The analysiswas carried out on transistors with p-type gate, rated for 600...

Gate Oxide Breakdown

The gate oxide thickness, (tox), of Complementary Metal Oxide Semiconductor (CMOS) processes has been steadily been thinning as a result of technology trends. To keep the switching power dissipation of integrated circuits at bay, successive technology generations have relied on reducing the supply voltage. In order to maintain performance, and control short channel effects, however, a reduction...